| Title | Catalyst-free synthesis of few-layer graphene films on silicon dioxide/Si substrates using ethylene glycol by chemical vapor deposition |
| Authors | 黄新堂 |
| Issue Date | 2019 |
| Publisher | Materials Research Express（2020年影响因子：1.620） |
| Keywords | BILAYER GRAPHENE HIGH-QUALITY GROWTH RAMAN-SPECTROSCOPY MONOLAYER TRANSPARENT ROADMAP CONFINEMENT |
| Abstract | Catalyst-free growth of graphene directly on dielectric substrates is a challenging work for graphene-based electronics. In this paper, a simple method to synthesize large area few layer graphene films on silicon dioxide/Si substrates by chemical vapor deposition is reported. A novel liquid carbon source (ethylene glycol) is used, without any catalysts. The obtained graphene films are characterized by Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy. The field effect transistor with graphene film as channel material is fabricated, and the carrier mobility is 707 cm 2 V -1 .S -1 . This work offers a new strategy to directly grow graphene on silicon dioxide/Si substrates, and the as-synthesized graphene films may have potential applications in sensors, conductive films, electronic devices, etc |
| Appears in Collections: | 基科部办公室 |
Original Search
